HER251(2002) 데이터 시트보기 (PDF) - Electronics Industry

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HER251
(Rev.:2002)

HIGH EFFICIENT RECTIFIER DIODES

Electronics Industry 

RATING AND CHARACTERISTIC CURVES ( HER251 - HER258 )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50 Ω

10 Ω

Trr

+ 0.5 A

+

50 Vdc

(approx)

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

0

- 0.25 A

1Ω

OSCILLOSCOPE

( NOTE 1 )

- 1.0 A

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

1 cm

SET TIME BASE FOR 25-35 ns/cm

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

2.5

2.0

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

100

8.3 ms SINGLE HALF SINE WAVE

Ta = 50 °C

80

1.5

60

1.0

40

0.5

60Hz RESISTIVE OR INDUCTIVE LOAD

00

25

50

75

100 125 150 175

AMBIENT TEMPERATURE, ( °C)

20

0

1

2

4 6 10

20

40 60 100

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

Pulse Width = 300 µs

2% Duty Cycle

TJ = 25 °C

10

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

10

TJ = 100 °C

1.0

HER251-HER255

1.0

0.1

HER256-HER258

0.01

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS

0.1

TJ = 25 °C

0.01

0

20

40

60 80

100

120 140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

Page 2 of 2

Rev. 01 : April 2, 2002

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