PTF10139 데이터 시트보기 (PDF) - Ericsson
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PTF10139 Datasheet PDF : 6 Pages
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PTF 10139
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current VDS = 28 V, VGS = 0 V
Gate-Source Leakage Current VGS = 20 V, VDS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
Forward Transconductance
VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
14
90
Gain (dB)
13
80
VDD = 28 V
12 IDQ = 500 mA
70
Output Power (W)
11
60
10
Efficiency (%) 50
9
40
840 860 880 900 920 940 960
Frequency (MHz)
e
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gfs
Min
65
—
—
3.0
—
Typ
—
—
—
—
2.8
Max
—
1.0
1
5.0
—
Units
Volts
mA
mA
Volts
Siemens
Symbol
VDS
VGS
ID
TJ
PD
TSTG
RqJC
Value
65
±20
7
200
194
1.11
-65 to 150
0.9
Unit
Vdc
Vdc
Adc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
Efficiency (%)
13
50
12
40
11 Gain (dB)
10
VDD = 28 V
IDQ = 500 mA
POUT = 60 W
9
8
920
Return Loss (dB)
930
940
950
Frequency (MHz)
30
-5
20
-15
10
-25
0
960
2
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