MGF0915A 데이터 시트보기 (PDF) - Mitsumi

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MGF0915A

L & S BAND GaAs FET [ SMD non - matched ]

Mitsumi 

MGF0915A TYPICAL CHARACTERISTICS

Po,Gp,PAE vs.Pin

40

35 VDS=10V

ID=0.8A

30 f=1.9GHz

25

20

15

10

5

0

5

10

Po

PAE

Gp

15

20

25

Pin(dBm)

80

70

60

50

40

30

20

10

0

30

IM3,Po(SCL) vs. Pi(SCL)

40

VD=10V

ID=800mA

30 f1=1.90GHz

Po

f2=1.91GHz

20

10

0

IM3

-10

-20

-30

-40

-5

0

5

10

15

20

Pi(SCL) (dBm)

10

0

-10

-20

-30

-40

-50

-60

-70

25

Mitsubishi Electric Jan 2003

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