MG600Q1US51 데이터 시트보기 (PDF) - Toshiba
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MG600Q1US51 Datasheet PDF : 7 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG600Q1US51
MG600Q1US51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in onepackage.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
JEDEC
EIAJ
TOSHIBA
Weight: 465g
Rating
Unit
1200
V
±20
V
600
A
1200
A
600
A
1200
A
4100
W
150
°C
−40 ~ 125
°C
2500
(AC 1 minute)
V
3/3
N·m
―
―
2-109F3A
1
2001-04-16
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