MG25Q1BS11 데이터 시트보기 (PDF) - Toshiba
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MG25Q1BS11 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter
Saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC = 25mA, VCE = 5V
VCE (sat) IC = 25A, VGE = 15V
Cies
tr
ton
tf
toff
Rth (j-c)
VCE = 10V, VGE = 0, f=1MHz
―
MG25Q1BS11
Min Typ. Max Unit
―
― ±500 nA
―
―
1.0 mA
3.0
―
6.0
V
―
2.2
2.7
V
― 3000 ―
pF
―
0.3
0.6
―
0.4
0.8
µs
―
0.6
1.0
―
1.2
1.8
―
―
0.5 °C / W
2
2003-04-11
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