MCR8SDG 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
일치하는 목록
MCR8SDG Datasheet PDF : 5 Pages
| |||
MCR8SD, MCR8SM, MCR8SN
THERMAL CHARACTERISTICS
Thermal Resistance,
Characteristic
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 16 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 W)
Holding Current (Note 4)
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (Note 4)
(VD = 12 V, IG = 200 mA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 W)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = *40°C
TJ = 110°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = 67% VDRM, RGK = 1 KW, CGK = 0.1 mF, TJ = 110°C)
Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 10 mA
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
3. RGK = 1000 Ohms included in measurement.
4. Does not include RGK in measurement.
Symbol
RqJC
RqJA
TL
Symbol
IDRM,
IRRM
VTM
IGT
IH
IL
VGT
VGD
dv/dt
di/dt
Value
2.2
62.5
260
Unit
°C/W
°C
Min Typ Max Unit
mA
−
−
10
−
−
500
−
−
1.8
V
5.0
25 200
mA
−
0.5 6.0
mA
−
0.6 8.0
mA
0.3 0.65 1.0
V
−
−
1.5
0.2
−
−
V
5.0 15
−
V/ms
−
−
100 A/ms
http://onsemi.com
2
Share Link: 