MCR25M 데이터 시트보기 (PDF) - ON Semiconductor

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MCR25M

Silicon Controlled Rectifiers Reverse Blocking Thyristors

ON Semiconductor 

MCR25D, MCR25M, MCR25N

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

ON CHARACTERISTICS

TJ = 25°C

TJ = 125°C

Peak Forward On-State Voltage (Note 2)

(ITM = 50 A)

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 W)

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 W)

Holding Current

(VD =12 Vdc, Initiating Current = 200 mA, Gate Open)

Latching Current

(VD = 12 V, IG = 30 mA)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = 67% of Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

Critical Rate of Rise of On−State Current

(IPK = 50 A, Pw = 30 msec, diG/dt = 1 A/msec, Igt = 50 mA)

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Symbol

RqJC

RqJA

TL

Value

1.5

62.5

260

Unit

°C/W

°C

Symbol Min Typ Max Unit

IDRM

IRRM

mA

−

− 0.01

−

−

2.0

VTM

−

−

1.8

V

IGT

4.0 12

30

mA

VGT

0.5 0.67 1.0

V

IH

5.0 13

40

mA

IL

−

35

80

mA

dv/dt

di/dt

100 250

−

V/ms

−

−

50 A/ms

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol

VDRM

IDRM

VRRM

IRRM

VTM

IH

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

Holding Current

IRRM at VRRM

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

VTM

IH

+ Voltage

IDRM at VDRM

Forward Blocking Region

(off state)

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