MCR12L(2008) 데이터 시트보기 (PDF) - ON Semiconductor
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MCR12L Datasheet PDF : 6 Pages
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MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Peak Forward On−State Voltage (Note 2)
(ITM = 24 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, Ig = 20 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On−State Current
IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA
2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%.
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
Symbol Min Typ Max Unit
IDRM,
IRRM
−
− 0.01 mA
−
−
2.0
VTM
−
−
2.2
V
IGT
2.0 4.0 8.0
mA
IH
4.0 10
20
mA
IL
6.0 12
30
mA
VGT
0.5 0.65 0.8
V
dv/dt
di/dt
100 250
−
V/ms
−
−
50 A/ms
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