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MC74VHC1G09MU3TCG(2018) 데이터 시트보기 (PDF) - ON Semiconductor

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MC74VHC1G09MU3TCG
(Rev.:2018)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74VHC1G09MU3TCG Datasheet PDF : 14 Pages
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MC74VHC1G09
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25°C
Symbol
tPZL
Parameter
Output Enable
Time, OE to Y
(Figures 3 and 4)
Conditions VCC (V) Min Typ Max
CL = 15 pF 3.0 to 3.6 6.2 8.8
CL = 50 pF
8.7 12.3
CL = 15 pF 4.5 to 5.5 4.3 5.9
CL = 50 pF
5.8 7.9
tPLZ Output Disable
Time, OE to Y
(Figures 3 and 4)
CL = 15 pF 3.0 to 3.6 6.5 9.7
CL = 50 pF
8.7 12.3
CL = 15 pF 4.5 to 5.5 4.8 6.8
CL = 50 pF
5.8 7.9
CIN Input Capacitance
4.0 10
COUT
Output Capacitance
Output in
High
Impedance
State
6.0
40°C TA 85°C
Min
Max
10.5
14.0
7.0
9.0
11.5
14.0
8.0
9.0
10
55°C TA 125°C
Min
Max Unit
12.5
ns
16.5
9.0
11.0
14.5
ns
16.5
10.0
11.0
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the noload dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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