MC-45V16AB642 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-45V16AB642

16M-WORD BY 64-BIT VirtualChannel™ DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-45V16AB642

16M-WORD BY 64-BIT

VirtualChannelTM DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-45V16AB642 is a 16,777,216 words by 64 bits VirtualChannel dynamic RAM module on which 8 pieces of

128M VirtualChannel DRAM : µPD45V128821 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

Read

Clock

Access time

Maximum supply current mA

latency frequency from CLK

Operating

Refresh

MHz (MAX.) ns (MAX.) Prefetch Restore

Channel

Auto Self

read / write (Burst)

MC-45V16AB642KF-A75

2

133

5.4

1,200

520

1,840 16

• Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Dual internal banks controlled by BA0 (Bank Select)

• Wrap sequence (interleave)

• Burst length (4)

• Read latency (2)

• Prefetch read latency (4)

• Auto precharge and without auto precharge

• Auto refresh and self refresh

• Single 3.3 V ± 0.3 V power supply

• Interface: LVTTL

• Refresh cycle: 4K cycles/64 ms

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0027N10 (1st edition)

(Previous No. M15112EJ2V0DS00)

Date Published January 2001 CP (K)

Printed in Japan

This Product became EOL in January, 2003.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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