MC-45D16CD641KS-C75 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-45D16CD641KS-C75

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Elpida Memory, Inc 

DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted)

Parameter

Operating current

(ACT-PRE)

Symbol

Test condition

/CAS Grade

latency

IDD0 tRC = tRC(MIN.), tCK = tCK (MIN.), One bank,

Active-precharge, DQ, DM and DQS

inputs changing twice per clock cycle,

Address and control inputs changing

once per clock cycle

-C75

-C80

MIN.

MAX.

920

Unit Notes

mA

840

Operating current

(ACT-READ-PRE)

Precharge power down

standby current

Idle standby current

Active power down

standby current

Active standby current

Operating current

(Burst read)

Operating current

(Burst write)

CBR (Auto) refresh

current

Self refresh current

IDD1

IDD2P

tRC = tRC(MIN.), tCK = tCK (MIN.), One

bank, Active-read-precharge,

IO = 0 mA, Burst length = 2,

Address and control inputs

changing once per clock cycle

CL = 2

CL = 2.5

-C75

-C80

-C75

-C80

CKE ≤ VIL(MAX.), tCK = tCK(MIN.),

All banks idle, Power down mode

IDD2N

IDD3P

CKE ≥ VIH(MIN.), tCK = tCK(MIN.), /CS ≥ VIH(MIN.),

All banks idle, Address and other control inputs

changing once per clock cycle

CKE ≤ VIL(MAX.), tCK = tCK(MIN.), One bank active,

Power down mode

IDD3N

/CS ≥ VIH(MIN.), CKE ≥ VIH(MIN.), tCK = tCK(MIN.), tRC =

tRAS(MAX.), One bank, Active-precharge, DQ, DM

and DQS inputs changing twice per clock

cycle, Address and other control inputs

changing once per clock cycle

IDD4R

tCK = tCK(MIN.), Continuous burst

read, Burst length = 2, IO =

0mA, One bank active,

Address and control inputs

changing once per clock cycle

CL = 2 -C75

-C80

CL = 2.5 -C75

-C80

IDD4W

tCK = tCK(MIN.), Continuous burst

write, Burst length = 2, One

bank active, Address and

control inputs changing once

per clock cycle

CL = 2 -C75

-C80

CL = 2.5 -C75

-C80

IDD5 tRFC = tRFC(MIN.)

-C75

IDD6 CKE ≤ 0.2 V

-C80

980

920

1020

960

80

400

mA 1

mA

mA

400

mA

560

mA

1080

1080

1340

1280

1040

1040

1300

1240

1360

1280

16

mA 2

mA 2

mA

mA

Notes 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open.

2. IDD4R and IDD4W depend on output loading and cycle rates. Specified values are obtained with the output

open.

DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted)

Parameter

Symbol

Test condition

MIN.

Input leakage current

Output leakage current

Output high current

II(L) VI = 0 to 3.6 V, all other pins not under test = 0 V

IO(L) DOUT is disabled, VO = 0 to VDDQ + 0.3 V

IOH VOUT = VDDQ − 0.43 V

−5

−5

−15.2

Output low current

IOL VOUT = 0.35 V

15.2

MAX.

5

5

Unit Notes

µA

µA

mA

mA

6

Preliminary Data Sheet E0187N10

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