MC-4516CB646PF-A10 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4516CB646PF-A10

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

MC-4516CB646

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Voltage on power supply pin relative to GND

Voltage on input pin relative to GND

Short circuit output current

EPower dissipation

Operating ambient temperature

Storage temperature

Symbol

VCC

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

8

W

0 to +70

°C

–55 to +125

°C

OCaution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

Lconditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Supply voltage

P High level input voltage

Low level input voltage

Operating ambient temperature

Symbol

VCC

VIH

VIL

TA

Condition

r Capacitance (TA = 25 °C, f = 1 MHz)

o Parameter

Input capacitance

duct Data input/output capacitance

Symbol

Test condition

CI1 A0 - A11, BA0(A13), BA1(A12), /RAS,

/CAS, /WE

CI2 CLK0, CLK2

CI3 CKE0

CI4 /CS0, /CS2

CI5 DQMB0 - DQMB7

CI/O DQ0 - DQ63

MIN.

3.0

2.0

−0.3

0

TYP.

MAX.

Unit

3.3

3.6

V

VCC + 0.3

V

+0.8

V

70

°C

MIN.

TYP.

MAX.

Unit

24

62

pF

20

40

28

52

15

29

3

13

4

13

pF

Data Sheet E0059N10

5

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