MBR350 데이터 시트보기 (PDF) - Vishay Semiconductors
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MBR350 Datasheet PDF : 5 Pages
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MBR350, MBR360
Vishay High Power Products Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
1.0 A
3.0 A
9.4 A
TJ = 25 °C
1.0 A
3.0 A
9.4 A
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.58
0.73
1.06
0.49
0.64
0.89
0.6
8
15
190
9.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style C-16
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES
- 40 to 150
UNITS
°C
30
°C/W
1.2
g
0.042
oz.
MBR350
MBR360
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93450
Revision: 06-Nov-08
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