MBR0520LT1G 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

일치하는 목록

MBR0520LT1G

Surface Mount Schottky Power Rectifier Plastic SOD−123 Package

ON Semiconductor 

MBR0520LT1, MBR0520LT3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR, TL = 90°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

VRRM

VRWM

VR

IF(AV)

IFSM

20

V

0.5

A

5.5

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature

TJ

−65 to +125

°C

Voltage Rate of Change (Rated VR)

dv/dt

1000

V/ms

ESD Ratings:

Machine Model = C

Human Body Model = 3B

> 400

V

> 8000

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Rating

Thermal Resistance; Junction−to−Ambient (Note 1)

Thermal Resistance; Junction−to−Lead

Symbol

RqJA

RqJL

Value

206

150

Unit

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 0.1 Amps)

(iF = 0.5 Amps)

Maximum Instantaneous Reverse Current (Note 2)

(VR = 10 V)

(Rated DC Voltage = 20 V)

1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

vF

TJ = 25°C TJ = 100°C

V

0.300

0.385

0.220

0.330

IR

TJ = 25°C TJ = 100°C mA

75 mA

250 mA

5 mA

8 mA

http://onsemi.com

2

Share Link: