MBM29F017A-12PFTN 데이터 시트보기 (PDF) - Fujitsu

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MBM29F017A-12PFTN

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

MBM29F017A-70/-90/-12

s LOGIC SYMBOL

21

A 0 to A 20

8

DQ0 to DQ7

CE

OE

WE

RESET

RY/BY

Table 1 MBM29F017A Pin Configuration

Pin

Function

A0 to A20

Address Inputs

DQ0 to DQ7

Data Inputs/Outputs

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RY/BY

RESET

N.C.

Ready-Busy Output

Hardware Reset Pin/Sector Protection

Unlock

No Internal Connection

VSS

Device Ground

VCC

Device Power Supply

Table 2 MBM29F017A User Bus Operations

Operation

CE OE WE A0 A1 A6

Auto-Select Manufacturer Code (1)

L

L

H

L

L

L

Auto-Select Device Code (1)

L LHHL L

Read (3)

L

L

H

A0

A1

A6

Standby

HXXXXX

Output Disable

L HHX X X

Write

L

H

L

A0

A1

A6

Enable Sector Group Protection (2)

L

VID

XXX

Verify Sector Group Protection (2)

L LHLHL

Temporary Sector Group Unprotection X X X X X X

Reset (Hardware)

XXXXXX

A9 DQ0 to DQ7 RESET

VID

Code

H

VID

Code

H

A9

DOUT

H

X HIGH-Z

H

X HIGH-Z

H

A9

DIN

H

VID

X

H

VID

Code

H

X

X

VID

X HIGH-Z

L

Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse Input. See DC Characteristics for voltage levels.

Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer

to Tables 6.

2. Refer to the section on Sector Group Protection.

3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

8

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