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MBR1035 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MBR1035
Fairchild
Fairchild Semiconductor Fairchild
MBR1035 Datasheet PDF : 3 Pages
1 2 3
MBR1035 - MBR1060
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
12
TO-220AC
PIN 1 +
PIN 2 -
CASE Positive
+
CASE
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
1035
Value
1045 1050
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
35
45
50
10
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Tstg
Storage Temperature Range
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
150
-65 to +175
-65 to +150
Thermal Characteristics
Symbol
PD
RθJA
RθJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
2.0
60
2.0
1060
60
Units
V
A
A
°C
°C
Units
W
°C/W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF
Forward Voltage IF = 10 A, TC = 25°C
IF = 10 A, TC = 125°C
IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IR
Reverse Current @ rated VR TA = 25°C
TA = 125°C
IRRM
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Device
1035 1045
-
0.57
0.84
0.72
1050 1060
0.80
0.70
0.95
0.85
0.1
15
1.0
0.5
Units
V
V
V
V
mA
mA
A
2001 Fairchild Semiconductor Corporation
MBR1035 - MBR1060, Rev. C

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