MAX1458C 데이터 시트보기 (PDF) - Maxim Integrated

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MAX1458C

1%-Accurate, Digitally Trimmed Sensor Signal Conditioner

Maxim Integrated 

MAX1458

1%-Accurate, Digitally Trimmed

Sensor Signal Conditioner

Control Words

After receiving the INIT SEQUENCE on DIO, the MAX1458

begins latching in 16-bit control words, LSB first (Figure 5).

The first 12 bits (D0–D11) represent the data field. The

last four bits of the control word (the MSBs, CM0–CM3)

are the command field. The MAX1458 supports the com-

mands listed in Table 5.

ERASE EEPROM Command

When an ERASE EEPROM command is issued, all of the

memory locations in the EEPROM are reset to a logic “0.”

The data field of the 16-bit word is ignored.

Important: An internal charge pump develops voltages

greater than 20V for EEPROM programming operations.

The EEPROM control logic requires 50ms to erase the

EEPROM. After sending a WRITE or ERASE command,

failure to wait 50ms before issuing another command may

result in data being accidentally written to the EEPROM.

The maximum number of ERASE EEPROM cycles should

not exceed 100.

BEGIN EEPROM WRITE Command

The BEGIN EEPROM WRITE command stores a logic

high at the memory location specified by the lower seven

bits of the data field (A0–A6). The higher bits of the data

field (A7–A11) are ignored (Figure 6). Note that to write

to the internal EEPROM, WE and CS must be high. In

Table 5. MAX1458 Commands

BEGIN EEPROM WRITE at

HEX

CODE

CM3

CM2

CM1

CM0

ERASE EEPROM

1h 0 0 0 1

BEGIN EEPROM WRITE at

Address

2h

0

0

1

0

READ EEPROM at Address 3h 0 0 1 1

Maxim Reserved

4h 0 1 0 0

END EEPROM WRITE at

Address

5h 0 1 0 1

WRITE Data to

Configuration Register

8h 1 0 0 0

WRITE Offset DAC

WRITE Offset TC DAC

WRITE FSO DAC

WRITE FSOTC DAC

No Operation

Load Register

9h 1 0 0 1

Ah 1 0 1 0

Bh 1 0 1 1

Ch 1 1 0 0

0h 0 0 0 0

6h, 0 1 1 0

7h, 0 1 1 1

Dh, 1 1 0 1

Eh, 1 1 1 0

Fh 1 1 1 1

SCLK

DIO

LSB

D0 D1 D2

DATA

D3 D4 D5 D6

D7 D8

COMMAND

MSB LSB

MSB

D9 D10 D11 CM0 CM2 CM2 CM3

16-BIT CONFIGURATION WORD

LSB

MSB LSB

MSB

Figure 5. Control-Word Timing Diagram

CS

WE

SCLK

tMIN = 200µs

16 CLK

CYCLES

16 CLK

CYCLES

n x 16 CLK

CYCLES

DIO

X

1 0 1 0 U 0 A0 A1 CM3

A0 A1 CM3

D0 D1 CM3

INIT SEQUENCE

BEGIN

EEPROM

WRITE

TWRITE

END

EEPROM

WRITE

tWAIT

n

COMMAND

WORDS

Figure 6. Timing Diagram for WRITE EEPROM Operation

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