M6MGB_T162S4BVP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M6MGB_T162S4BVP Datasheet PDF : 29 Pages
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DEVICE IDENTIFIER CODE
Code
Pins
A0
Manufacturer Code
VIL
Device Code (-T162S4BVP)
VIH
Device Code (-B162S4BVP)
VIH
The upper data(D15-8) is "0".
MITSUBISHI LSIs
M6MGB/T162S4BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
DQ7
0
1
1
DQ6
0
0
0
DQ5
0
1
1
DQ4
1
0
0
DQ3
1
0
0
DQ2
1
0
0
DQ1
0
0
0
DQ0 Hex. Data
0
1CH
0
A0H
1
A1H
ABSOLUTE MAXIMUM RATINGS
Symbol
F-Vcc
VI1
Ta
Tbs
Tstg
I OUT
Parameter
Flash Vcc voltage
All input or output voltage 1)
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
Conditions
With respect to Ground
Min Max Unit
-0.2 4.6
V
-0.6 4.6
V
-20
85
°C
-50
95
°C
-65 125
°C
100
mA
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is F-VCC+0.5V which, during transitions, may overshoot to F-VCC+1.5V for periods <20ns.
CAPACITANCE
Symbol
Parameter
CIN
COUT
Input capacitance (Address, Control Pins)
Output capacitance
Test conditions
Limits
Min Typ Max
Unit
Ta = 25°C, f = 1MHz, Vin = Vout = 0V
8
pF
12
pF
Note: The value of common pins to Flash Memory is the sum of Flash Memory and SRAM.
DC ELECTRICAL CHARACTERISTICS (Ta = -20~ 85°C, F-Vcc = 2.7V ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ1) Max
Unit
ILI
Input leakage current
ILO
Output leakage current
ISB1
0V£VIN£F-VCC
0V£VOUT£F-VCC
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
±2.0
mA
±11
mA
50 200
mA
F-VCC standby current
ISB2
F-VCC = 3.6V, VIN=GND or F-VCC,
F-CE# = F-RP# = F-WP# = F-VCC±0.3V
0.1
5
mA
ISB3
F-VCC = 3.6V, VIN=VIL/VIH, F-RP# = VIL
F-VCC deep powerdown current
ISB4
F-VCC = 3.6V, VIN=GND or VCC, F-RP# =GND±0.3V
5
15
mA
0.1
5
mA
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = VIL, 5MHz
ICC1
F-VCC read current for Word or Byte F-RP#=OE#=VIH, IOUT = 0mA
1MHz
8
15
2
4
mA
ICC2
F-VCC Write current for Word or Byte
F-VCC = 3.6V,VIN=VIL/VIH, F-CE# =WE#= VIL,
F-RP#=OE#=VIH
15
mA
ICC3
F-VCC program current
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
35
mA
ICC4
F-VCC erase current
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
35
mA
ICC5
F-VCC suspend current
VIL
Input low voltage
VIH
Input high voltage
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH
– 0.5
2.0
200
mA
0.8
V
F-Vcc+0.5
V
VOL
Output low voltage
IOL = 4.0mA
0.45
V
VOH1
VOH2
Output high voltage
IOH = –2.0mA
IOH = –100mA
0.85(F-Vcc)
V
F-Vcc–0.4
V
VLKO
Low VCC Lock-Out voltage 2)
1.5
2.2
V
All currents are in RMS unless otherwise noted.
1) Typical values at F-Vcc=3.3V, Ta=25°C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.
If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents
may occur.
10
Sep. 1999 , Rev.2.0
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