BCR5AS 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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BCR5AS Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
102
7
5
3
2 VGM = 10V
101
7
5
3 VGT = 1.5V
2
PGM =
0.3W
PGM = 3W
IGM = 2A
100
7
IFGT I
5
IRGT I
3
IRGT III
2
10–1
VGD = 0.2V
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
8
7
6 360°
CONDUCTION
5 RESISTIVE,
INDUCTIVE
4 LOADS
3
2
1
0
012345678
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
IRGT III
3
IRGT I
2
102
IFGT I
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
012345678
RMS ON-STATE CURRENT (A)
Feb.1999
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