M62216FP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M62216FP Datasheet PDF : 8 Pages
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MITSUBISHI SEMICONDUCTOR<STD-Linear IC>
M62216FP/GP
Low Voltage Operation STEP-UP DC-DC Converter
Equation for Constants Calculation
Constants
TON
TOFF
TON+TOFF
TOFF(MIN)
TON(MAX)
Ipk
Standard Application Circuit
VO + VF - VIN
VIN - VCE(sat)
1
fosc
TON + TOFF
1 + TON
TOFF
1
fosc
- TOFF(MIN)
TON
2 * 1 + TOFF * (Io + IB)
L(MIN)
R1
(VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc
2 * Vo * (Io + IB)
Vo
VREF - 1 * R2
Vo - (VBE + Vsat1)
RD1
(Ipk / hFE) * A1
RD2
Vo - (VBE + Vsat2)
(Ipk / hFE) * A2
Application Circuit 1
Application Circuit 2
VO + VF - VIN
VIN - VCE(sat)
1
fosc
VO + VF - VIN
VIN - VCE(sat)
1
fosc
TON + TOFF
1 + TON
TOFF
TON + TOFF
1 + TON
TOFF
1
fosc
- TOFF(MIN)
1
fosc
- TOFF(MIN)
TON
2 * 1 + TOFF * Io
TON
2 * 1 + TOFF * Io
(VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc
2 * Vo * Io
2 * Vo * Io
Vo
VREF - 1 * R2
Vo
VREF - 1 * R2
Vo - (VBE + Vsat1)
(Ipk / hFE) * A1
VIN - (VBE + Vsat1)
(Ipk / hFE) * A1
Vo - (VBE + Vsat2)
(Ipk / hFE) * A2
VIN - (VBE + Vsat2)
(Ipk / hFE) * A2
Constants
TON
TOFF
TON+TOFF
TOFF(MIN)
TON(MAX)
Ipk
STEP-DOWN Circuit
VO + VF
VIN - VCE(sat) - Vo
1
fosc
TON + TOFF
1 + TON
TOFF
1
fosc
- TOFF(MIN)
2 * Io
L(MIN)
R1
RD1
RD2
(VIN - VCE(sat) - Vo) * TON(MAX)
∆Io
Vo
VREF - 1 * R2
Vo - VBE - Vsat1
Ipk / hFE
VIN - Vsat2
(Ipk / hFE) * A3
Notice)
• VF : Forward voltage of external diode.
• VCE(sat) : Saturation voltage of external transistor.
• VBE : Voltage between Base - Emitter of external transistor.
• hFE : hFE of external transistor at saturating.
• A1 : Ratio of current into DRIVE1 terminal.
(A1 = 0.8 ~ 0.9)
• A2 : Ratio of current into DRIVE2 terminal.
(A2 = 1 - A1)
• A3 : Ratio of current into DRIVE2 terminal.
(A3 = 0.1 ~ 0.2)
• Set R2 to several KΩ ~ several 10ths kΩ.
• Set current into DRIVE2 terminal more than 100µA.
(Ipk / hFE) * A2 ≥ 100µA, (Ipk / hFE) * A3 ≥ 100µA,.
• Set ∆Io to 1/ 5 ~ 1/ 3 of maximum load current.
• The maximum rating of current of external parts (transistor,
diode and inductor) are 1.5 to 2 times of Ipk.
(8/ 8)
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