GLT6100L08LL-85TS 데이터 시트보기 (PDF) - G-Link Technology
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GLT6100L08LL-85TS Datasheet PDF : 10 Pages
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G-LINK
GLT6100L08
Ultra Low Power 128k x 8 CMOS SRAM
Nov 2000(Rev. 02)
DC Operating Characteristics ( Vcc=2.7V to 3.3V, TA =-25°C to 85°C )
Parameter
Sym.
Test Conditions
55
Min Max
70
Min Max
85
Min Max
100
Min Max
Unit
Input Leakage Current
ILI VCC = Max,
Vin = Gnd to VCC
1
1
1
1 µA
Output Leakage
Current
ILO
CE1 =VIH or CE2 = VIH
VCC = Max, VOUT = Gnd to VCC
1
1
1
1 µA
Operating Power
Supply Current
ICC
CE1 =VIL ,CE2 = VIH
VIN=VIH or VIL, IOUT=0mA
3
3
3
3 mA
Average Operating
Current
ICC1
CE1 =VIL ,CE2 = VIH
IOUT = 0mA,
Min Cycle, 100% Duty
ICC2 CE1 =0.2V
CE2 = VCC – 0.2V
IOUT = 0mA,
Cycle Time=1µs, 100% Duty
30
25
20
15 mA
3
3
3
3 mA
Standby Power Supply
Current(TTL Level)
ISB
CE1 =VIH or CE2 = VIL
0.5
0.5
0.5
0.5 mA
Standby Power Supply
Current (CMOS Level)
ISB1
CE1 ≥ VCC-
GLT6100L08LL
5
0.2V or
5
5
5 µA
CE2 ≤ 0.2V, f=0
VIN ≤ 0.2V or GLT6100L08SL
1
1
1
1 µA
VIN ≥ VCC-0.2V
Output Low Voltage
VOL IOL = 2 mA
0.4
0.4
0.4
0.4 V
Output High Voltage
VOH IOH = 2 mA
2.4
2.4
2.4
2.4
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE1 ≥ VCC -0.2V or
CE2 ≤ +0.2V,
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
1.0
0
tRC
Max.
-
5
-
-
Unit
V
µA
ns
ns
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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