GLT6100L08LL-55ST 데이터 시트보기 (PDF) - G-Link Technology
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GLT6100L08LL-55ST Datasheet PDF : 10 Pages
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G-LINK
GLT6100L08
Ultra Low Power 128k x 8 CMOS SRAM
Nov 2000(Rev. 02)
Pin Descriptions:
Name
A 0 - A16
CE 1 and CE2
OE
WE
I/ O0 -I/ O7
VCC
GND
NC
Function
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input and Data Output
3V Power Supply
Ground
No Connection
Truth Table:
CE1
CE2
WE
OE
H
X
X
X
X
L
X
X
L
H
H
L
L
H
H
H
L
H
L
X
Data
High-Z
High-Z
Data Out
High-Z
Data Out
Mode
Standby
Standby
Active, Read
Active, Output Disable
Active, Write
Absolute Maximum Ratings*
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-
-55
-40
Maximum
4.6
1.0
+150
+85
Unit
V
W
°C
°C
*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Recommended Operating Conditions ( TA = -25°C to 85°C )**
Parameter
Symbol
Min
Typ
Supply Voltage
VCC
2.7
3.0
Input Voltage
VIH
2.2
-
VIL
-0.5*
-
Max
3.3
VCC+0.5
0.6
Unit
V
V
V
* VIL min = -1.0V for pulse width less than tRC/2.
** For Industrial Temperature.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-2-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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