BS616LV8015BC 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS616LV8015BC Datasheet PDF : 9 Pages
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BSI
BS616LV8015
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
VIL
Voltage (2)
Vcc=5V
Guaranteed Input High
VIH
Voltage (2)
Vcc=5V
MIN. TYP.(1) MAX. UNITS
-0.5
--
0.8
V
2.2
--
Vcc+0.2
V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
IOL
Output Leakage Current Vcc = Max, CE1=VIH, or CE2 = ViL , or
OE = VIH , VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=5V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, I OH= -1mA
Vcc=5V 2.4
--
ICC
Operating Power Supply Vcc= max, CE1=VIL and CE2 =
Current
VIH , IDQ = 0mA, F = Fmax(3)
Vcc=5V
--
--
ICCSB
Standby Current - TTL
Vcc= max, CE1 = VIH or CE2 =
VIL , IDQ= 0mA
Vcc=5V
--
--
Vcc= max,CE1ЊVcc -0.2V, or
ICCSB1
Standby Current - CMOS CE2 Љ0.2V, VIN Њ Vcc - 0.2V
Vcc=5V
--
3
or VINЉ0.2V
--
V
45
mA
2
mA
30
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2Љ0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE1 Њ Vcc - 0.2V or CE2Љ0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.2
2
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1≥ Vcc - 0.2V
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
tR
VIH
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR Њ 1.5V
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616LV8015
3
Revision 2.4
April 2002
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