MC-4R512FKE6D-845 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4R512FKE6D-845

Direct Rambus DRAM RIMM™ Module 512M-BYTE (256M-WORD x 16-BIT)

Elpida Memory, Inc 

MC-4R512FKE6D

RIMM Module Current Profile

IDD

IDD1

RIMM module power conditions Note1

One RDRAM in Read Note2, balance in NAP mode

-845

MAX.

Unit

693

mA

-745

643

IDD2

One RDRAM in Read Note2, balance in Standby mode

-653

-845

583

1980

mA

-745

1780

IDD3

One RDRAM in Read Note2, balance in Active mode

-653

-845

1570

2655

mA

-745

2455

IDD4

One RDRAM in Write, balance in NAP mode

-653

-845

2245

783

mA

-745

733

IDD5

One RDRAM in Write, balance in Standby mode

-653

-845

683

2070

mA

-745

1870

IDD6

One RDRAM in Write, balance in Active mode

-653

-845

1670

2745

mA

-745

2545

-653

2345

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the

following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Data Sheet E0077N20 (Ver 2.0)

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