2SA1797(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SA1797
(Rev.:2009)

Power Transistor (−50V, −3A)

ROHM Semiconductor 

2SA1797

z Electrical characteristic curves

2.0

Ta=25°C

1.8

1.6

1.4

1.2

1

800m

lB=10mA

9mA

8mA

7mA

6mA

5mA

4mA

600m

3mA

400m

200m

2mA

1mA

0

0 1 2 3 4 5 6 7 8 9 10

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded EmitterOutput

Characteristics

−10

−5

−2

−1

−0.5

VCE=2V

−0.2

−0.1

−0.05

−0.02

−0.01

−5m

−2m

−1m

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded Emitter Propagation

Characteristics

Data Sheet

5000

2000

1000

500

200

100

50

VCE=2V

Ta=100°C

Ta=25°C

Ta=−40°C

20

10

5

-1m-2m-5m-0.0-10.02-0.0-50.-1 0.2-0.5 -1 -2 -5-10

COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

Collector Current

-1

-0.5

-0.2

-0.1

-0.05

-0.02

lC/lB=20

Ta=100°C

Ta=25°C

Ta=−40°C

-0.01

-1m-2m-5m-0.0-10.02-0.0-50.-1 0.2-0.5 -1 -2 -5-10

COLLECTOR CURRENT : IC (A)

Fig.4 Collector-Emitter Saturation

Voltage vs. Collector Current

10

10ms

100ms

1

1ms

DC

0.1

0.01 Ta=25°C

Single non repetitive pulse

Mounted on epoxy board

12mm×15mm×t0.8mm

0.001

0.1

1

10

100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.5 Safe Operating Area

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2009.04 - Rev.C

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