2N1711 데이터 시트보기 (PDF) - Philips Electronics
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2N1711 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N1711
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• DC and wideband amplifiers.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
MIN.
open emitter
−
open base
−
−
Tamb ≤ 25 °C
−
IC = 150 mA; VCE = 10 V
100
IC = 50 mA; VCE = 10 V; f = 100 MHz 70
MAX.
75
50
1
0.8
300
−
UNIT
V
V
A
W
MHz
1997 May 28
2
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