EGP10A 데이터 시트보기 (PDF) - Vishay Semiconductors
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EGP10A Datasheet PDF : 4 Pages
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EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
100
Pulse Width = 300 μs
1 % Duty Cycle
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.2
EGP10A thru EGP10D
EGP10F and EGP10G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
70
TJ = 25 °C
60
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
EGP10A thru EGP10D
EGP10F and EGP10G
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
100
TJ = 150 °C
10
10
TJ = 100 °C
1
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
Note
DIA.
•
Lead
diameter
is
0.026
0.023
(0.66)
(0.58)
for
suffix
“E”
part
numbers
1.0 (25.4)
MIN.
Revision: 15-Aug-13
3
Document Number: 88582
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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