LL4154(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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LL4154
(Rev.:1999)

Silicon Epitaxial Planar Diodes

Vishay Semiconductors 

LL4154

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Breakdown voltage

Diode capacitance

Reverse recovery

time

Test Conditions

IF=30mA

VR=25V

VR=25V, Tj=150°C

IR=5mA, tp/T=0.01, tp=0.3ms

VR=0, f=1MHz, VHF=50mV

W IF=IR=10mA, iR=1mA

IF=10mA, VR=6V, iR=0.1xIR, RL=100

Type Symbol Min Typ Max Unit

VF

IR

IR

V(BR) 35

CD

trr

trr

1V

100 nA

100 mA

V

4 pF

4 ns

2 ns

Characteristics (Tj = 25_C unless otherwise specified)

100

3.0

Scattering Limit

2.5

10

2.0

1

1.5

0.1

0.01

0

94 9154

VR = 25 V

40

80

120 160 200

Tj – Junction Temperature ( °C )

Figure 1. Reverse Current vs. Junction Temperature

1.0

0.5

0

0.1

94 9156

f = 1 MHz

Tj = 25°C

1

10

100

VR – Reverse Voltage ( V )

Figure 3. Diode Capacitance vs. Reverse Voltage

1000

100

Tj = 100°C

10

Tj = 25°C

1

0.1

0

94 9152

0.4

0.8

1.2

1.6 2.0

VF – Forward Voltage ( V )

Figure 2. Forward Current vs. Forward Voltage

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Document Number 85560

Rev. 3, 01-Apr-99

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