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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

L6384E 데이터 시트보기 (PDF) - STMicroelectronics

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L6384E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6384E Datasheet PDF : 17 Pages
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L6384E
Electrical characteristics
Table 6. DC operation electrical characteristcs (continued)(VCC = 14.4V; TJ = 25°C)
Symbol Pin
Parameter
Test condition
Min Typ Max Unit
High/Low side driver
Iso
Source short circuit current VIN = Vih (tp < 10µs) 300 400
mA
5,7
Isi
Sink short circuit current
VIN = Vil (tp < 10µs) 500 650
mA
Logic inputs
Vil
Low level logic threshold
voltage
1.5 V
Vih
High level logic threshold
1,3 voltage
3.6
V
Iih
High level logic input current VIN = 15V
Iil
Low level logic input current VIN = 0V
Iref
3 Dead time setting current
dt
3 vs
5,7
Dead time setting range (2)
Rdt = 47k
Rdt = 146k
Rdt = 270k
Vdt
3 Shutdown threshold
50 70 µA
1 µA
28
µA
0.4 0.5
µs
1.5
µs
2.7 3.1 µs
0.5
V
1. RDS(on) is tested in the following way:
RDSON
=
--(--V----C----C-----–----V-----C---B----O----O----T---1---)----–----(---V----C----C----–-----V----C----B---O----O----T----2---)-
I1(VCC,VCBOOT1) I2(VCC,VCBOOT2)
where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2
2. Pin 3 is a high impedence pin. Therefore dt can be set also forcing a certain voltage V3 on this pin. The
dead time is the same obtained with a Rdt if it is: Rdt × Iref = V3.
3.3
Timing diagram
Figure 3. Input/output timing diagram
IN
SD
HVG
LVG
D99IN1017
7/17

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