L6229Q 데이터 시트보기 (PDF) - STMicroelectronics
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L6229Q Datasheet PDF : 28 Pages
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Electrical characteristics
4
Electrical characteristics
L6229Q
Table 6.
Symbol
Electrical characteristics
(VS = 48 V, TA = 25 °C, unless otherwise specified)
Parameter
Test condition
VSth(ON) Turn-on threshold
VSth(OFF) Turn-off threshold
IS
Quiescent supply current
Tj(OFF) Thermal shutdown temperature
Output DMOS transistors
All bridges OFF;
TJ = -25 °C to 125 °C(1)
RDS(on)
High-side + low-side switch ON
resistance
IDSS Leakage current
TJ = 25 °C
TJ =125 °C (1)
EN = Low; OUT = VS
EN = Low; OUT = GND
Source drain diodes
VSD Forward ON voltage
trr
Reverse recovery time
tfr
Forward recovery time
ISD = 1.4 A, EN = LOW
If = 1.4 A
Logic inputs (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW)
VIL
VIH
IIL
IIH
Vth(ON)
Vth(OFF)
Vth(HYS)
Low level logic input voltage
High level logic input voltage
Low level logic input current
High level logic input current
Turn-on input threshold
Turn-off input threshold
Input threshold hysteresis
Switching characteristics
GND logic input voltage
7 V logic input voltage
tD(ON)EN
tD(OFF)EN
tD(on)IN
tD(off)IN
tRISE
tFALL
tDT
Enable to output turn-on delay
time (2)
Enable to output turn-off delay time (2)
Other logic inputs to OUT turn-ON delay
time
Other logic inputs to OUT turn-OFF
delay time
ILOAD = 1.4 A, resistive load
Output rise time (2)
Output fall time (2)
Dead time
8/28
Doc ID 15209 Rev 3
Min Typ Max Unit
5.8 6.3 6.8 V
5 5.5 6 V
5 10 mA
165
°C
1.47 1.69 Ω
2.35 2.70 Ω
2 mA
-0.3
mA
1.15 1.3 V
300
ns
200
ns
-0.3
0.8 V
2
7V
-10
µA
10 µA
1.8 2.0 V
0.8 1.3
V
0.25 0.5
V
500 650 800 ns
500
1000 ns
1.6
µs
800
ns
40
250 ns
40
250 ns
0.5 1
µs
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