L6226Q 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

L6226Q

DMOS dual full bridge driver

STMicroelectronics 

L6226Q

3

Electrical characteristics

Electrical characteristics

TA = 25 °C, Vs = 48 V, unless otherwise specified

Table 5. Electrical characteristics

Symbol

Parameter

VSth(ON) Turn-on threshold

VSth(OFF) Turn-off threshold

IS

Quiescent supply current

TJ(OFF) Thermal shutdown temperature

Output DMOS transistors

RDS(on)

High-side + low-side switch ON

resistance

IDSS Leakage current

Source drain diodes

VSD Forward ON voltage

trr

Reverse recovery time

tfr

Forward recovery time

Logic input

VIL

VIH

IIL

IIH

Vth(ON)

Vth(OFF)

Vth(HYS)

Low level logic input voltage

High level logic input voltage

Low level logic input current

High level logic input current

Turn-on input threshold

Turn-off input threshold

Input threshold hysteresis

Switching characteristics

tD(on)EN Enable to out turn ON delay time (2)

tD(on)IN

tRISE

tD(off)EN

tD(off)IN

tFALL

Input to out turn ON delay time

Output rise time (2)

Enable to out turn OFF delay time (2)

Input to out turn OFF delay time

Output fall time (2)

Test condition

All bridges OFF;

TJ = -25 °C to 125 °C (1)

TJ = 25 °C

TJ = 125 °C (1)

EN = Low; OUT = VS

EN = Low; OUT = GND

ISD = 2.8 A, EN = LOW

If = 1.4 A

GND logic input voltage

7 V logic input voltage

ILOAD =1.4 A, resistive load

ILOAD =1.4 A, resistive load

(dead time included)

ILOAD =1.4 A, resistive load

ILOAD =1.4 A, resistive load

ILOAD =1.4 A, resistive load

ILOAD =1.4 A, resistive load

Min Typ Max Unit

5.8 6.3 6.8 V

5 5.5 6

V

5 10 mA

165

°C

1.47 1.69 Ω

2.35 2.70 Ω

2 mA

-0.3

mA

1.15 1.3 V

300

ns

200

ns

-0.3

0.8 V

2

7

V

-10

µA

10 µA

1.8 2.0 V

0.8 1.3

V

0.25 0.5

V

500

800 ns

1.9

µs

40

250 ns

500 800 1000 ns

500 800 1000 ns

40

250 ns

Doc ID 14335 Rev 5

7/29

Share Link: