L6205 데이터 시트보기 (PDF) - STMicroelectronics
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L6205 Datasheet PDF : 21 Pages
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ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, Vs = 48V, unless otherwise specified)
Symbol
Parameter
Test Conditions
VSth(ON) Turn-on Threshold
VSth(OFF) Turn-off Threshold
IS Quiescent Supply Current
All Bridges OFF;
Tj = -25°C to 125°C (7)
Tj(OFF) Thermal Shutdown Temperature
Output DMOS Transistors
RDS(ON) High-Side Switch ON Resistance Tj = 25 °C
Tj =125 °C (7)
Low-Side Switch ON Resistance Tj = 25 °C
Tj =125 °C (7)
IDSS Leakage Current
EN = Low; OUT = VS
EN = Low; OUT = GND
Source Drain Diodes
VSD Forward ON Voltage
ISD = 2.8A, EN = LOW
trr Reverse Recovery Time
If = 2.8A
tfr Forward Recovery Time
Logic Input
VIL Low level logic input voltage
VIH High level logic input voltage
IIL Low Level Logic Input Current GND Logic Input Voltage
IIH High Level Logic Input Current 7V Logic Input Voltage
Vth(ON) Turn-on Input Threshold
Vth(OFF) Turn-off Input Threshold
Vth(HYS) Input Threshold Hysteresis
Switching Characteristics
tD(on)EN Enable to out turn ON delay time (8) ILOAD =2.8A, Resistive Load
tD(on)IN Input to out turn ON delay time ILOAD =2.8A, Resistive Load
(dead time included)
tRISE Output rise time(8)
ILOAD =2.8A, Resistive Load
tD(off)EN Enable to out turn OFF delay time (8) ILOAD =2.8A, Resistive Load
L6205
Min Typ Max Unit
6.6
7
7.4
V
5.6
6
6.4
V
5
10
mA
165
°C
0.34 0.4
Ω
0.53 0.59
Ω
0.28 0.34
Ω
0.47 0.53
Ω
-0.15
2
mA
mA
1.15 1.3
V
300
ns
200
ns
-0.3
0.8
V
2
7
V
-10
µA
10
µA
1.8
2.0
V
0.8
1.3
V
0.25 0.5
V
100 250 400
ns
1.6
µs
40
250
ns
300 550 800
ns
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