KM416C4000C 데이터 시트보기 (PDF) - Samsung

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KM416C4000C

4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Samsung 

KM416C4000C, KM416C4100C

CMOS DRAM

13. tASC, tCAH are referenced to the earlier CAS falling edge.

14. tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.

15. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.

16. tCWL is specified from W falling edge to the earlier CAS rising edge.

17. tCSR is referenced to the earlier CAS falling edge before RAS transition low.

18. tCHR is referenced to the later CAS rising edge after RAS transition low.

RAS

LCAS

UCAS

tCSR

tCHR

19. tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge.

LCAS

UCAS

DQ0 ~ DQ15

tDS

tDH

Din

20. If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.

21. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K/8K) cycles of burst refresh must be executed within

64ms before and after self refresh, in order to meet refresh specification.

22. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately

before and after self refresh in order to meet refresh specification.

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