KM416C4000C-5 데이터 시트보기 (PDF) - Samsung
부품명
상세내역
일치하는 목록
KM416C4000C-5 Datasheet PDF : 35 Pages
| |||
KM416C4000C, KM416C4100C
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
Max
KM416C4000C
ICC1
Don′t care
-5
-6
90
80
ICC2
Normal
Don′t care
2
ICC3
Don′t care
-5
-6
90
80
ICC4
Don′t care
-5
-6
60
50
ICC5
Normal
Don′t care
1
ICC6
Don′t care
-5
-6
120
110
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
CMOS DRAM
KM416C4100C
120
110
2
120
110
70
60
1
120
110
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
Share Link: 