K9F2G08R0A 데이터 시트보기 (PDF) - Samsung

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K9F2G08R0A

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08R0A

K9F2G08U0A

FLASH MEMORY

AC Characteristics for Operation

Parameter

Symbol

Min

1.8V

3.3V

Data Transfer from Cell to Register

ALE to RE Delay

tR

-

-

tAR

10

10

CLE to RE Delay

Ready to RE Low

tCLR

10

10

tRR

20

20

RE Pulse Width

WE High to Busy

tRP

21

12

tWB

-

-

Read Cycle Time

RE Access Time

tRC

42

25

tREA

-

-

CE Access Time

RE High to Output Hi-Z

CE High to Output Hi-Z

CE High to ALE or CLE Don’t Care

tCEA

-

-

tRHZ

-

-

tCHZ

-

-

tCSD

0

0

RE High to Output Hold

RE Low to Output Hold

tRHOH

15

15

tRLOH

5

5

CE High to Output Hold

tCOH

15

15

RE High Hold Time

Output Hi-Z to RE Low

tREH

10

10

tIR

0

0

RE High to WE Low

WE High to RE Low

tRHW

tWHR

100

100

60

60

Device Resetting Time(Read/Program/Erase)

tRST

-

-

RE Pulse Width during Busy State

Read Cycle Time during Busy State

RE Access Time during Busy State

tRPB(2)

35

-

tRCB(2)

50

-

tREAB(2)

-

-

NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.

2. This parameter (tRPB/tRCB/tREAB) must be used only for 1.8V device.

Max

Unit

1.8V

3.3V

25

25

µs

-

-

ns

-

-

ns

-

-

ns

-

-

ns

100

100

ns

-

-

ns

30

20

ns

35

25

ns

100

100

ns

30

30

ns

-

-

ns

-

-

ns

-

-

ns

-

-

ns

-

-

ns

-

-

ns

-

-

ns

-

-

ns

5/10/500(1) 5/10/500(1)

µs

-

-

ns

-

-

ns

40

-

ns

14

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