K8P2716UZC 데이터 시트보기 (PDF) - Samsung
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K8P2716UZC Datasheet PDF : 56 Pages
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K8P2716UZC
Rev. 1.0
datasheet NOR FLASH MEMORY
7.0 ORDERING INFORMATION
Samsung
NOR Flash Memory
K8 P 27 16 U Z C - J I 4C
Access Time
4C : 65ns/25ns
4D : 70ns/30ns
4E : 80ns/30ns
Device Type
P : Page Mode
Operating Temperature Range
C : Commercial Temp. (0 °C to 70 °C)
E : Extended Temp. (-25 °C to 85 °C)
I : Industrial Temp. (-40 °C to 85 °C)
Density
27 : 128Mbits, Single Bank
Organization
16 : x16 , x8 Organization
Package
J : 64FBGA (Lead Free, Halogen Free,
1.0mm ball pitch)
Q : 56TSOP1(Lead Free, Halogen Free)
Version
C : 4th Generation
Operating Voltage Range
U : 2.7 V to 3.6V
Block Architecture
Z : Uniform Block
[Table 1] PRODUCT LINE-UP
Vcc
VIO2)
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
Max. Page Access Time (ns)
4C
2.7V~3.6V
2.7V~3.6V
65ns
65ns
25ns
25ns
NOTE :
1) The device supports only 4E at VIO = 1.7~1.95V.
2) Contact samsung sales office for specification change points when low VIO option is required.
[Table 2] K8P2716UZB DEVICE BLOCK DIVISIONS
Mbit
128 Mbit
4D
2.7V~3.6V
2.7V~3.6V
70ns
70ns
30ns
30ns
Block Sizes
64 Kw x 128
4E
2.7V~3.6V
1.7V~Vcc
80ns
80ns
30ns
30ns
[Table 3] OTP BLOCK
Block Address
A22~A8
Area
Block Size
OTP
0000h
Factory-Locked Area
Customer-Locked Area
128 words
128 words
After entering OTP block, any issued addresses should be in the range of OTP block address
Address Range
000000h-00007Fh
000080h-0000FFh
-9-
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