K91G08Q0M 데이터 시트보기 (PDF) - Samsung

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K91G08Q0M

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung 

K9F1G08Q0M K9F1G16Q0M

K9F1G08D0M K9F1G16D0M

K9F1G08U0M K9F1G16U0M

Document Title

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

FLASH MEMORY

Revision History

Revision No History

0.7

Errata is added.(Front Page)-K9F1GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Specification 45 25 15 50 15 25 30 45

Relaxed value 80 60 20 80 20 60 60 75

0.8

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

0.9

1. 2.65V device is added.

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

1.0

AC parameters are changed-K9F1GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Before 45 25 15 50 15 25 30 45

After 80 60 20 80 20 60 60 75

1.1

Added Addressing method for program operation

1.2

1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.

1.3

1. PKG(TSOP1, WSOP1) Dimension Change

Draft Date Remark

Mar.17. 2003

Apr. 9. 2003

Jul. 2. 2003

Aug. 5. 2003

Jan. 27. 2004

Apr. 23. 2004

May. 24. 2004

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

2

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