DS_K9F1208U0M 데이터 시트보기 (PDF) - Samsung
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DS_K9F1208U0M Datasheet PDF : 41 Pages
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
64M x 8 Bit NAND Flash Memory
Features
• Voltage Supply : 2.7V~3.6V
• Organization
- Memory Cell Array : (64M + 2,048K)bit x 8bit
- Data Register : (512 + 16)bit x8bit multipled by four planes
• Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
• 528-Byte Page Read Operation
- Random Access : 12µs(Max.)
- Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back Operation
• Package :
- K9F1208U0M-YCB0, K9F1208U0M-YIB0 :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
• Simultaneous Four Page/Block Program/Erase
Pin Configuration
General Description
The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash
Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state
mass storage market. A program operation can be performed in
typical 200µs on the 528-byte page and an erase operation can
be performed in typical 2ms on a 16K-byte block. Data in the
page can be read out at 50ns cycle time per byte. The I/O pins
serve as the ports for address and data input/output as well as
command inputs. The on-chip write controller automates all
program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even
the write-intensive systems can take advantage of the
K9F1208U0M’s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm. The K9F1208U0M-YCB0/YIB0 is an
optimum solution for large nonvolatile storage applications such
as solid state file storage and other portable applications requir-
ing non-volatility.
Pin Description
N.C
1
N.C
2
N.C
3
N.C
4
N.C
5
N.C
6
R/B
7
RE
8
CE
9
N.C
10
N.C
11
Vcc
12
Vss
13
N.C
14
N.C
15
CLE
16
ALE
17
WE
18
WP
19
N.C
20
N.C
21
N.C
22
N.C
23
N.C
24
48-pin TSOP1
Standard Type
12mm x 20mm
48 N.C
47 N.C
46 N.C
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 N.C
38 N.C
37 Vcc
36 Vss
35 N.C
34 N.C
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 N.C
26 N.C
25 N.C
Pin Name
I/O0 ~ I/O7
CLE
ALE
CE
RE
WE
WP
R/B
VCC
VSS
N.C
Pin Function
Data Input/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Ready/Busy output
Power(+2.7V~3.6V)
Ground
No Connection
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
6
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