K4E641612D 데이터 시트보기 (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

CMOS DRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to VSS

Symbol

VIN, VO U T

Rating

-0.5 to +4.6

Units

V

Voltage on VC C supply relative to VSS

VCC

-0.5 to +4.6

V

Storage Temperature

Power Dissipation

Tstg

-55 to +150

°C

PD

1

W

Short Circuit Output Current

IOS Address

50

mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= -40 to 85°C)

Parameter

Symbol

Min

Typ

Max

Supply Voltage

VCC

3.0

3.3

3.6

Ground

VS S

0

0

0

Input High Voltage

VIH

2.0

Input Low Voltage

V IL

-0.3 * 2

*1 : Vcc+1.3V at pulse width≤15ns which is measured at VC C

*2 : -1.3 at pulse width≤15ns which is measured at V SS

-

Vcc+0.3*1

-

0.8

Units

V

V

V

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,

all other pins not under test=0 Volt)

II(L)

-5

Max

Units

5

uA

Output Leakage Current

(Data out is disabled, 0V≤VOUT≤VCC )

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-2mA)

Output Low Voltage Level(IOL =2mA)

VOH

2.4

VOL

-

-

V

0.4

V

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