IXGA12N60C 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGA12N60C Datasheet PDF : 4 Pages
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IXGA12N60C IXGP12N60C
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
g
I = I ; V = 10 V,
fs
C
C90 CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
C
oes
Cres
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
Characteristic Values
Min. Typ. Max.
7 11
S
860
pF
64
pF
15
pF
TO-220 AB Dimensions
Qg
Q
ge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
I = I , V = 15 V, V = 0.5 V
C
C90 GE
CE
CES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may
increase for V (Clamp) > 0.8 V ,
CE
CES
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher T or increased R
J
G
32
nC
10
nC
10
nC
20
ns
20
ns
60
ns
55
ns
0.09
mJ
20
ns
20
ns
0.15
mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
1.25 K/W
0.25
K/W
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-263 AA Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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