IW4020B 데이터 시트보기 (PDF) - IK Semicon Co., Ltd
부품명
상세내역
일치하는 목록
IW4020B Datasheet PDF : 6 Pages
| |||
IW4020B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIN
PD
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +20
V
-0.5 to VCC +0.5
V
-0.5 to VCC +0.5
V
±10
mA
500*1
mW
Ptot Power Dissipation per Output Transistor
Tstg Storage Temperature
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
100
mW
-65 to +150
°C
260
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
*1 For TA=-55 to 100°C (package plastic DIP), for TA=-55 to 65°C (package SOIC)
+Derating - Plastic DIP: - 12 mW/°C from 100°С to 125°C
SOIC Package: : - 7 mW/°C from 65°С to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN, VOUT
TA
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min Max Unit
3.0
18
V
0
VCC
V
-55 +125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
Share Link: 