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ISL9R1560PF2 데이터 시트보기 (PDF) - Fairchild Semiconductor

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ISL9R1560PF2
Fairchild
Fairchild Semiconductor Fairchild
ISL9R1560PF2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Package Marking and Ordering Information
Device Marking
R1560PF2
Device
ISL9R1560PF2
Package
TO-220F
Tape Width
N/A
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 15A
TC = 25°C
TC = 125°C
- 1.8 2.2 V
- 1.65 2.0 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
62
-
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
IF = 15A, dIF/dt = 100A/µs, VR = 30V -
IF = 15A,
-
dIF/dt = 200A/µs,
-
VR = 390V, TC = 25°C
-
IF = 15A,
-
dIF/dt = 200A/µs,
-
VR = 390V,
-
TC = 125°C
-
IF = 15A,
-
dIF/dt = 800A/µs,
-
VR = 390V,
-
TC = 125°C
-
-
25 30 ns
35 40 ns
29.4 -
ns
3.5 -
A
57
-
nC
90
-
ns
2.0 -
5.0 -
A
275
-
nC
52
-
ns
1.36 -
13.5 -
A
390
-
nC
800 - A/µs
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
-
- 4.1 °C/W
-
-
70 °C/W
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. A1

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