IS61C6416AL 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS61C6416AL Datasheet PDF : 17 Pages
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IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Output Capacitance
VOUT = 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
ISSI ®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage(1)
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD
Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.2 VDD + 0.5
V
–0.3
0.8
V
–1
1
µA
–2
2
–5
5
–1
1
µA
–2
2
–5
5
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
01/17/05
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