IRLR7843CPBF 데이터 시트보기 (PDF) - International Rectifier

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IRLR7843CPBF

HEXFET® Power MOSFET

International Rectifier 

IRLR/U7843CPbF

1000

100

10

VGS

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

2.5V

1

0.1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

VGS

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

2.5V

10

1

0.1

20µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100 TJ = 175°C

2.0

ID = 30A

VGS = 10V

1.5

TJ = 25°C

10

1

2.0

VDS = 15V

20µs PULSE WIDTH

3.0

4.0

5.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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