IRLR7843PBF(2004) 데이터 시트보기 (PDF) - International Rectifier

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IRLR7843PBF
(Rev.:2004)

HEXFET® Power MOSFET

International Rectifier 

IRLR/U7843PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

19

2.6

3.2

–––

3.3

4.0

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 15A

e VGS = 4.5V, ID = 12A

Gate Threshold Voltage

1.5 ––– 2.3 V VDS = VGS, ID = 250µA

Gate Threshold Voltage Coefficient

––– -5.4 ––– mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

37 ––– –––

––– 34 50

S VDS = 15V, ID = 12A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 9.1 –––

VDS = 15V

––– 2.5 ––– nC VGS = 4.5V

––– 12 –––

ID = 12A

––– 10 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 15 –––

Qoss

td(on)

tr

td(off)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

–––

–––

21

25

–––

–––

e nC VDS = 15V, VGS = 0V

VDD = 15V, VGS = 4.5V

––– 42 –––

ID = 12A

––– 34 ––– ns Clamped Inductive Load

tf

Fall Time

––– 19 –––

Ciss

Input Capacitance

––– 4380 –––

VGS = 0V

Coss

Output Capacitance

––– 940 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 430 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

1440

12

14

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

f Min. Typ. Max. Units

Conditions

––– ––– 161

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

2

––– ––– 620

A showing the

integral reverse

––– ––– 1.0

e p-n junction diode.

V TJ = 25°C, IS = 12A, VGS = 0V

––– 39

––– 36

59

54

e ns TJ = 25°C, IF = 12A, VDD = 15V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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