IRL630 데이터 시트보기 (PDF) - International Rectifier

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IRL630

HEXFET® Power MOSFET

International Rectifier 

10

8

6

4

2

0

A

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

VDS

VGS

RG

5.0 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

IRL630

RD

D.U.T.

VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

1 D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

PD M

t1

t2

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t1 / t2

0.01

0.00001

0.0001

0.001

0.01

2 . P e a k TJ = PD M x Z th J C + TC

0.1

1

10AA

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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