IRH7450SE 데이터 시트보기 (PDF) - International Rectifier
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IRH7450SE
International Rectifier
IRH7450SE Datasheet PDF : 8 Pages
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Pre-Irradiation
IRH7450SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance
Diode Forward Voltage
100K Rads (Si)
Min
Max
500
—
2.0
4.5
—
100
—
-100
—
50
—
0.51
—
1.6
Units
V
nA
µA
Ω
V
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 400V, VGS=0V
VGS = 12V, ID = 7.0A
VGS = 0V, ID = 12A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
MeV/(mg/cm2))
(MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V@VGS=-15V @VGS=-20V
Cu
28
285
43
375
375
375
375
375
Br
36.8
305
39
350
350
350
325
300
Ni
26.6
265
42
375
—
—
—
—
400
300
Cu
200
Br
Ni
100
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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