IRG4PC50KD 데이터 시트보기 (PDF) - International Rectifier

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IRG4PC50KD

Short Circuit Rated UltraFast IGBT

International Rectifier 

IRG4PC50KD

Same type

device as

D .U .T .

80%

of Vce

430µF

D .U .T .

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Vge

VC

90%

10%

90%

td(off)

IC 5%10%

t d(on)

tr

tf

Eon

Eoff

Ets = (Eon +Eoff )

t=5µs

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

GATE VO LTAG E D.U.T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td(on)

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

E on = VVcceeieIcdt dt

t1

t2

trr

Ic

tx

10% Vcc

Vpk

Irr

DIO DE REVERSE

RECOVERY ENERGY

t3

trr

∫ Q rr = iIdcddt t

tx

10% Irr

Vcc

DIODE RECOVERY

W AVEFORMS

∫ t4

E rec = VVddidIcdt dt

t3

t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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