HM62V8512BLTT 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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HM62V8512BLTT Datasheet PDF : 17 Pages
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HM62V8512B Series
Revision Record
Rev. Date
0.0 Apr. 24, 1998
0.1 Nov. 19, 1998
1.0 Dec. 17, 1998
2.0 Jan. 29, 1999
3.0 Apr. 8, 1999
4.0 Aug. 24, 1999
5.0 Oct. 20, 1999
6.0 Mar. 31, 2000
Contents of Modification
Initial issue
DC Characteristics
ICC1 max: 30 mA to 40 mA
ISB1 max: 20/2 µA to 40/20 µA
Low VCC Data Retention Characteristics
ICCDR max: 10/1 µA to 20/10 µA
Change of note1 and 2
Deletion of Preliminary
Features
Change of Power dissipation
Active: TBD (typ) to 15 mW/MHz (typ)
Standby: TBD (typ) to 3 µW (typ)
DC Characteristics
ICC2 typ: TBD to 5 mA
ISB1 typ: TBD/TBD to 1/1 µA
Low VCC Data Retention Characteristics
ICCDR typ: TBD/TBD to 0.8/0.8 µA
Low VCC Data Retention Characteristics
Change of Low VCC Data Retention Timmng Waveform
Addition of L-UL-version
DC Characteristics
ISB1 typ: 1/1 µA to 1/1/1 µA
ISB1 max: 40/20 µA to 40/20/5 µA
Addition of note4
Low VCC Data Retention Characteristics
ICCDR typ: 0.8/0.8 µA to 0.8/0.8/0.8 µA
ICCDR max: 20/10 µA to 20/10/2 µA
Addition of note3
Low VCC Data Retention Characteristics
Correct error: tR unit ms to ns
Low VCC Data Retention Characteristics
Change of Low VCC Data Retention Timmng Waveform
AC Characteristics
Test Conditions: Output timing reference level
0.8 V/2.0 V to 1.5 V/1.5 V (HM62V8512B-7)
0.8 V/2.0 V (HM62V8512B-8)
Drawn by
M. Higuchi
S. Kunito
S. Kunito
S. Kunito
S. Kunito
S. Kunito
I. Ogiwara
Approved by
K. Imato
K. Imato
K. Imato
K. Imato
K. Imato
K. Imato
K. Imato
17
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