HM62V8512CLTT-5 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM62V8512CLTT-5

4 M SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

Function Table

WE

CS

OE

×

H

×

H

L

H

H

L

L

L

L

H

L

L

L

Note: ×: H or L

HM62V8512C Series

Mode

Not selected

Output disable

Read

Write

Write

VCC current

ISB, ISB1

I CC

I CC

I CC

I CC

Dout pin

High-Z

High-Z

Dout

Din

Din

Ref. cycle

—

—

Read cycle

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Symbol

Power supply voltage

Voltage on any pin relative to VSS

Power dissipation

Operating temperature

VCC

VT

PT

Topr

Storage temperature

Tstg

Storage temperature under bias

Tbias

Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.

2. Maximum voltage is 4.6 V.

Value

–0.5 to +4.6

–0.5*1 to VCC + 0.5*2

1.0

–20 to +70

–55 to +125

–20 to +85

Unit

V

V

W

°C

°C

°C

Recommended DC Operating Conditions (Ta = –20 to +70°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC

2.7

3.0

VSS

0

0

Input high voltage

VIH

2.0

—

Input low voltage

VIL

–0.3*1

—

Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.

Max

3.6

0

VCC + 0.3

0.8

Unit

V

V

V

V

5

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